SID05N10 5a , 100v , r ds(on) 170 m ? n-channel enhancement mode power mosfet elektronische bauelemente 26-dec-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a c d h g e f k b j p m rohs compliant product a suffix of -c specifies halogen-free description the SID05N10 provide the designer with the best combination of fast switching, the to-251 package i s universally preferred for all commercial-industrial surface mount applications. the device is suited for charge r, industrial and consumer environment. features low on-resistance fast switching speed low-voltage drive (4v) wide soa (safe operating area) easily designed drive circuits easy to parallel marking: absolute maximum ratings parameter symbol ratings unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v continuous drain current t c =25 c i d 5 a t c =100 c 3.75 a pulsed drain current 1 i dm 20 a total power dissipation @ t c = 25 c p d 20 w thermal resistance junction-case r jc 6.25 c / w thermal resistance junction-ambient r ja 110 c / w linear derating factor 0.16 w / c operating junction & storage temperature t j , t stg -55~150 c to-251 ref. millimeter ref. millimeter min. max. min. max. a 6.40 6.80 g 5.40 5.80 b 5.20 5.50 h 0.90 1.50 c 2.20 2.40 j 2.30 d 0.45 0.55 k 0.60 0.90 e 6.80 7.20 m 0.50 0.70 f 7.20 7.80 p 0.45 0.60 05n10 date code 1 gate 3 source 2 drain
SID05N10 5a , 100v , r ds(on) 170 m ? n-channel enhancement mode power mosfet elektronische bauelemente 26-dec-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j =25 c unless otherwise specified) parameter symbol min typ max unit test conditions drain-source breakdown voltage bv dss 100 - - v v gs =0, i d =1ma gate threshold voltage v gs(th) 1 - 2.5 v v ds =10v, i d =1ma forward trans-conductance g fs - 4 - s v ds =10v, i d =2.5a gate-source leakage current i gss - - 100 na v gs = 20v drain-source leakage current t j =25 c i dss - - 10 ua v ds =100 v, v gs =0 static drain-source on-resistance 2 r ds(on) - - 170 m v gs =10 v, i d =2.5a - - 200 v gs =4v, i d =2.5a turn-on delay time 2 t d(on) - 9 - ns v dd =30v i d =1a v gs =10 v r g =6 r l =30 rise time t r - 9.4 - turn-off delay time t d(off) - 26.8 - fall time t f - 2.6 - input capacitance c iss - 975 - pf v gs =0 v ds =25v f =1 mhz output capacitance c oss - 38 - reverse transfer capacitance c rss - 27 - source-drain diode forward on voltage 2 v sd - - 1.5 v i s =5a, v gs =0 ,t j =25 c notes: 1. pulse width limited by maximum junction temper ature. 2. pulse width Q 300us, duty cycle Q 2% .
SID05N10 5a , 100v , r ds(on) 170 m ? n-channel enhancement mode power mosfet elektronische bauelemente 26-dec-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
SID05N10 5a , 100v , r ds(on) 170 m ? n-channel enhancement mode power mosfet elektronische bauelemente 26-dec-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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